JPH0227812B2 - - Google Patents

Info

Publication number
JPH0227812B2
JPH0227812B2 JP58165354A JP16535483A JPH0227812B2 JP H0227812 B2 JPH0227812 B2 JP H0227812B2 JP 58165354 A JP58165354 A JP 58165354A JP 16535483 A JP16535483 A JP 16535483A JP H0227812 B2 JPH0227812 B2 JP H0227812B2
Authority
JP
Japan
Prior art keywords
optical device
compound semiconductor
item
manufacturing
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58165354A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5972141A (ja
Inventor
Henrii Baaton Randorufu
Arubaato Kooru Hooru
Uiriamu Osutaameiyaa Junya Furederitsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of JPS5972141A publication Critical patent/JPS5972141A/ja
Publication of JPH0227812B2 publication Critical patent/JPH0227812B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58165354A 1982-09-10 1983-09-09 光デバイスの製作方法 Granted JPS5972141A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/416,473 US4415414A (en) 1982-09-10 1982-09-10 Etching of optical surfaces
US416473 1982-09-10

Publications (2)

Publication Number Publication Date
JPS5972141A JPS5972141A (ja) 1984-04-24
JPH0227812B2 true JPH0227812B2 (en]) 1990-06-20

Family

ID=23650120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165354A Granted JPS5972141A (ja) 1982-09-10 1983-09-09 光デバイスの製作方法

Country Status (6)

Country Link
US (1) US4415414A (en])
EP (1) EP0103443B1 (en])
JP (1) JPS5972141A (en])
CA (1) CA1232568A (en])
DE (1) DE3378712D1 (en])
ES (1) ES525515A0 (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03270853A (ja) * 1990-03-20 1991-12-03 Toyo A Tec Kk 工具折損検知装置
JPH055349U (ja) * 1991-07-04 1993-01-26 三井精機工業株式会社 横型多軸ヘツド用刃具検査装置

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689125A (en) * 1982-09-10 1987-08-25 American Telephone & Telegraph Co., At&T Bell Labs Fabrication of cleaved semiconductor lasers
US4482443A (en) * 1983-12-30 1984-11-13 At&T Technologies Photoelectrochemical etching of n-type silicon
US4608138A (en) * 1984-02-16 1986-08-26 Mitsubishi Denki Kabushiki Kaisha Electrolytic method and apparatus
US4559116A (en) * 1984-07-09 1985-12-17 Minnesota Mining And Manufacturing Company Process of etching semiconductor electrodes
US4700210A (en) * 1984-11-21 1987-10-13 American Telephone And Telegraph Company, At&T Bell Laboratories Asymmetric chip design for LEDS
GB8429701D0 (en) * 1984-11-23 1985-01-03 British Telecomm Integrated optoelectronic devices
US4622114A (en) * 1984-12-20 1986-11-11 At&T Bell Laboratories Process of producing devices with photoelectrochemically produced gratings
US4613417A (en) * 1984-12-28 1986-09-23 At&T Bell Laboratories Semiconductor etching process
GB2181567B (en) * 1985-07-04 1989-01-11 Plessey Co Plc Infra-red fresnel lenses and methods of fabrication
GB2203892A (en) * 1987-04-24 1988-10-26 Philips Electronic Associated A method of etching a semiconductor body
AU614644B2 (en) * 1988-07-18 1991-09-05 Unisearch Limited Sculpted solar cell structures
US5053106A (en) * 1988-10-12 1991-10-01 Occidental Chemical Corporation Low friction, wear resistant plastic parts
US5250471A (en) * 1988-12-26 1993-10-05 The Furukawa Electric Co. Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light
US5277769A (en) * 1991-11-27 1994-01-11 The United States Of America As Represented By The Department Of Energy Electrochemical thinning of silicon
US5374330A (en) * 1992-04-20 1994-12-20 Texas Instruments Incorporated Anisotropic barium strontium titanate etch
US5238529A (en) * 1992-04-20 1993-08-24 Texas Instruments Incorporated Anisotropic metal oxide etch
US5312516A (en) * 1992-04-20 1994-05-17 Texas Instruments Incorporated Anisotropic tantalum pentoxide etch
US5238530A (en) * 1992-04-20 1993-08-24 Texas Instruments Incorporated Anisotropic titanate etch
US5338415A (en) * 1992-06-22 1994-08-16 The Regents Of The University Of California Method for detection of chemicals by reversible quenching of silicon photoluminescence
US5418114A (en) * 1992-09-30 1995-05-23 Texas Instruments Incorporated Anisotropic liquid phase photochemical mercury cadmium telluride etch
US5279702A (en) * 1992-09-30 1994-01-18 Texas Instruments Incorporated Anisotropic liquid phase photochemical copper etch
US5348627A (en) * 1993-05-12 1994-09-20 Georgia Tech Reserach Corporation Process and system for the photoelectrochemical etching of silicon in an anhydrous environment
AU6938598A (en) * 1997-03-27 1998-10-22 Corning Incorporated Surface figuring of optical surfaces of silicon carbide by photoelectrochemical etching
US6074546A (en) 1997-08-21 2000-06-13 Rodel Holdings, Inc. Method for photoelectrochemical polishing of silicon wafers
US20030057106A1 (en) * 2001-09-12 2003-03-27 Zhouxin Shen High throughput chemical analysis by improved desorption/ionization on silicon mass spectrometry
CN101248373B (zh) * 2005-08-26 2010-11-03 松下电工株式会社 制造半导体光学透镜的方法
EP1952109A1 (en) * 2005-11-25 2008-08-06 Matsushita Electric Works, Ltd. Infrared detection unit using a semiconductor optical lens
TWI419356B (zh) * 2008-03-05 2013-12-11 Univ Nat Taiwan 週期性結構之製作方法及發光元件之製作方法
CN103743613B (zh) * 2014-01-20 2015-11-11 厦门大学 一种光学元件刻蚀装置
KR101969401B1 (ko) * 2017-06-05 2019-04-16 아주대학교산학협력단 식각액 및 이를 이용하는 반도체 소자의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041258A (en) * 1960-06-24 1962-06-26 Thomas V Sikina Method of etching and etching solution for use therewith
US3728236A (en) * 1971-08-05 1973-04-17 Rca Corp Method of making semiconductor devices mounted on a heat sink
GB1448600A (en) * 1973-12-06 1976-09-08 Standard Telephones Cables Ltd Semiconductor etching
US3954523A (en) * 1975-04-14 1976-05-04 International Business Machines Corporation Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
JPS57141919A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Manufacture of semiconductor device
US4389291A (en) * 1981-06-19 1983-06-21 Bell Telephone Laboratories, Incorporated Photoelectrochemical processing of InP-type devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03270853A (ja) * 1990-03-20 1991-12-03 Toyo A Tec Kk 工具折損検知装置
JPH055349U (ja) * 1991-07-04 1993-01-26 三井精機工業株式会社 横型多軸ヘツド用刃具検査装置

Also Published As

Publication number Publication date
ES8405999A1 (es) 1984-07-01
EP0103443A2 (en) 1984-03-21
JPS5972141A (ja) 1984-04-24
CA1232568A (en) 1988-02-09
EP0103443A3 (en) 1985-01-09
EP0103443B1 (en) 1988-12-14
DE3378712D1 (en) 1989-01-19
ES525515A0 (es) 1984-07-01
US4415414A (en) 1983-11-15

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